Morphology and origin of V-defects in semipolar (11-22) InGaN

Authors: 
Lotsari, A.
Das, A.
Kehagias, Th.
Kotsar, Y.
Monroy, E.
Karakostas, Th.
Gladkov, P.
Komninou, Ph.
Dimitrakopulos, G.P.
Year: 
2012
DOI: 
10.1016/j.jcrysgro.2011.11.055
Bibliography format: 

Lotsari, A. ; Das, A. ; Kehagias, Th. ; Kotsar, Y. ; Monroy, E. ; Karakostas, Th. ; Gladkov, Petr ; Komninou, Ph. ; Dimitrakopulos, G.P. Morphology and origin of V-defects in semipolar (11-22) InGaN. Journal of Crystal Growth (2012)

Tým: 
Synthesis and characterization of nanomaterials
In ASEP Database

IPE carries out fundamental and applied research in the scientific fields of photonics, optoelectronics and electronics. In these fields, IPE generates new knowledge and develops new technologies.

Contact us

Data box: m54nucy

IČ: 67985882
DIČ: CZ67985882