>
>
Jan Grym

Ing. Jan Grym, Ph.D.

Jan Grym
Pozice: Zástupce ředitele pro vědecké otázky; Vedoucí vědeckého týmu
Oddělení: Příprava a charakterizace nanomateriálů, Vedení
Lokalita: Hlavní budova ÚFE, Praha 8 - Kobylisy

Oblasti vědeckého zájmu:

  • Electronics and optoelectronics
  • Preparation and characterization of semiconductor nanomaterials and nanostructures

Profesní činnost:

2023–present: Member of the evaluation panel of the Research, Development, and Innovation Council of the Government of the Czech Republic

2023–present: Member of the evaluation panel Electrical Engineering and Electronic Engineering of the Czech Science Foundation

2022 Member of the workgroup Materials Science and Technology for the implementation of Open Science in the Czech Republic

2019–2021: Vice-chairman of the evaluation panel Condensed Matter and Materials Physics of the Czech Science Foundation
 
2019–present: Member of the Doctoral Board Physics of Surfaces and Interfaces, Faculty of Mathematics and Physics of Charles University in Prague
 
2019: Scientific committee member: European Materials Research Society (E-MRS) Meeting
 

2017–2019: Member of the evaluation panel Condensed Matter and Materials Physics of the Czech Science Foundation

2017–present: Member of the Doctoral Board Electrotechnology and Materials, Faculty of Electrical Engineering of the Czech Technical University in Prague

2016–present: Member of the Doctoral Board Physics of Condensed Matter and Materials Research, Faculty of Mathematics and Physics of Charles University in Prague

2014–2020: Scientific committee member: International Conference on Electrophoretic Deposition

2010–present: Scientific Committee member of the Development of Materials Science in Research and Education conference

2009–2015: Committee member of the Czechoslovak Association for Crystal Growth


Zkušenosti z mezinárodního výzkumu:

2012–2015: Visiting scientist at the Center of Functional Nanomaterials, Brookhaven National Laboratory, USA, four short-term stays. Nanomaterials for energy.

2005: Visiting scientist, two-month stay, Institute of Semiconductors, Chinese Academy of Sciences, Beijing. Technology of wide bandgap semiconductors.

2003–2004: Marie Curie Fellowship, Dept. of Physics of Materials, Faculty of Physics, Universidad Complutense de Madrid, Spain. Research training in characterization of electronic and optical properties of semiconductors by microscopy and spectroscopy techniques.


Vzdělání:

2007  Ph.D. in Electrotechnology and Materials, Czech Technical University in Prague, Faculty of Electrical Engineering
2000  MSc. in Technological Systems, Czech Technical University in Prague, Faculty of Electrical Engineering


Pro studenty:


 

Více informací:

Aktivní projekty

Řešitel:

Období: 

1. ledna 2023 –
31. prosince 2025

Spoluřešitel:

Člen:

Ukončené projekty

Řešitel:

Období: 

1. ledna 2019 –
31. prosince 2021

Spoluřešitel:

Člen:

Období: 

1. ledna 2020 –
31. prosince 2022

Období: 

1. ledna 2017 –
31. prosince 2019

Publikace

Knihy:

Kapitoly knih:

Odborné články:

M. Belhaj, E. B. H. Jrad, J. Grym, R. Yatskiv, and C. Dridi, "Development of New Sustainable Near-UV Photodetectors Devices based on Polymer/ZnO NRs heterojunctions with Improved Responsivity", IEEE Transactions on Electron Devices 72 (2), 755-760 (2025) doi:https://doi.org/10.1109/ted.2024.3520547
A.V. Vasin, Y.V. Gomeniuk, P.M. Lytvyn, A.V. Rusavsky, S.V. Mamykin, I.P. Tyagulsky, E. Bortchagovsky, Y. Havryliuk, S.I. Tiagulskyi, R. Yatskiv, J. Grym, D.R.T. Zahn and A.N. Nazarov, "Structural insight into nanoscale inhomogeneity of electrical properties in highly conductive polycrystalline ZnO thin films doped using methane", Journal of Physics D: Applied Physics 57 (15), 155101 (2024) doi:DOI: 10.1088/1361-6463/ad1791
Skip to content