Key
Search
Facebook-f X-twitter Youtube Linkedin
ufe70-4-en500
Home
>
Employees
>
Roman Yatskiv (Jackiv)

Roman Yatskiv (Jackiv), Ph.D.

mg-1080-400px
Position: Deputy team leader; Senior research scientist
Department: Synthesis and characterization of nanomaterials
+420 266 773 423
yatskiv@ufe.cz
Location: Main building of UFE, Praha 8 - Kobylisy

Research interests:

  • Photoluminescence spectroscopy of compound semiconductors
  • Electrical characterization of semiconductor materials
  • Growth and characterization of low-dimensional semiconductor structures

Education:

2007  Ph.D., Czech Technical University in Prague, Faculty of Electrical Engineering, Department of Microelectronics, specialization: Electronics

2002  Mgr., Yuriy Fedkovych Chernivtsi National University, Faculty of Physics, Department of Electronics and Power Engineering

More information:

Orcid
Scopus
Publons

Active grant projects:

Investigator:

Co-investigator:

Photoinduced effects in glasses transmitting infrared radiation

Period: 

1. January 2025 –
31. December 2027
Electric charge transport in heterostructures of semiconductor oxides with copper halides

Period: 

1. January 2023 –
31. December 2025

Member:

Development of Sensors for Hydrogen and Carbon Monoxide Detection in the Energy and Automotive Industries

Period: 

1. January 2024 –
30. June 2026

Closed grant projects

Investigator:

Study of charge transport mechanisms in graphene-semiconductor junctions

Period: 

1. January 2020 –
31. December 2022
Study of the optoelectronic properties of hybrid heterojunction.

Period: 

1. January 2017 –
31. December 2019
Electrophoretic deposition of nanostructured ZnO layers and their use in the detection of environmentally hazardous gases

Period: 

1. January 2014 –
30. April 2016
Study of metal nanoparticle layers deposited by electrophoresis on semiconductor III-V-N compounds

Period: 

1. May 2010 –
31. December 2012
Role of transition metals and rare-earth elements in preparation of InP-based materials for radiation detectors.

Period: 

1. January 2009 –
31. December 2011

Co-investigator:

Preparation and characterisation of disordered materials for application in infrared spectra

Period: 

1. March 2020 –
31. December 2022
Glasses transmitting infrared radiation based on heavy metal oxides (2019-21)

Period: 

1. January 2019 –
30. June 2022
Special glasses for optoelectronics, non-linear optics and fiber optics

Period: 

1. January 2014 –
31. December 2015

Member:

Nanostructured heterojunctions for chemiresistors

Period: 

1. January 2019 –
31. December 2021
Growth mechanisms of solution-grown one-dimensional semiconductor structures on patterned substrates

Period: 

1. January 2017 –
11. December 2020
III-V semiconductor heterostructures/nanostructures towards innovative electronic and photonic applications

Period: 

1. January 2012 –
31. December 2013
Role of the interface in the preparation of high quality Schottky barriers on III-V semiconductors.

Period: 

1. March 2012 –
30. November 2013

Publications

Books:

Book chapters:

Journal papers:

M. Belhaj, E. B. H. Jrad, J. Grym, R. Yatskiv, and C. Dridi, "Development of New Sustainable Near-UV Photodetectors Devices based on Polymer/ZnO NRs heterojunctions with Improved Responsivity", IEEE Transactions on Electron Devices 72 (2), 755-760 (2025) doi:https://doi.org/10.1109/ted.2024.3520547
M. S. Kukurudziak, E. V. Maistruk, R. Yatskiv, I. P. Koziarskyi, D. P. Koziarskyi, "Silicon p-i-n photodiode with reduced crystallographic defect density and structured surface", Journal of Physics D: Applied Physics 58 (16), 165106 (2025) doi:https://doi.org/10.1088/1361-6463/adbd4d
Skip to content